continental device india limited data sheet page 1 of 3 silicon planar epitaxial switching transistor n?p n transistor marking c mbt2369 = lj absolute maximum ratings collector?base voltage (open emitter) v cb0 max. 40 v collector?emitter voltage (v be = 0) v ces max. 40 v collector?emitter voltage (open base) v ce0 max. 15 v collector current (d.c. value) i c max. 500 ma total power dissipation up to t amb = 25 c p tot max. 250 mw d.c. current gain i c = 10ma; v ce = 1 v h fe 40 to 120 i c = 100 ma; v ce = 2 v h fe >20 storage time i con = i bon = i boff = 10 ma t s <13ns CMBT2369 package outline details all dimensions in mm pin configuration 1 = base 2 = emitter 3 = collector 3 2 1 sot-23 formed smd package continental device india limited an iso/ts16949 and iso 9001 certified company
continental device india limited data sheet page 2 of 3 ratings (at t a = 25c unless otherwise specified) limiting values collector?base voltage (open emitter) v cb0 max. 40 v collector?emitter voltage (v be = 0) v ces max. 40 v collector?emitter voltage (open base) v ce0 max. 15 v emitter?base voltage (open collector) v eb0 max. 4,5 v collector current (d.c. value) i c max. 500 ma total power dissipation up to t amb = 25 c p tot max. 250 mw storage temperature t stg ?55 to 150 c junction temperature t j max. 150 c thermal resistance from junction to ambient in free air r th j?a = 500 k/w characteristics (at t a = 25c unless otherwise specified) t j = 25 c unless otherwise specified collector cut?off current i e = 0; v cb = 20 v i cb0 < 400 na i e = 0; v cb = 20v; t j = 125c i cb0 <30 m a saturation voltages i c = 10 ma; l b = 1 ma v cesat < 0,25 v v besat 0,70 to 0,85 v d.c. current gain i c = 10ma; v ce = 1 v h fe 40 to 120 i c = 10ma; v ce = 1 v; t amb = ?55c h fe >20 i c = 100 ma; v ce = 2 v h fe >20 output capacitance at f = 1 mhz i e = 0; v cb = 5v co < 4,0 pf small?signal current gain i c = 1,0ma; v ce = 10v; f = 100mhz; t amb = 25c h fe > 5,0 breakdown voltages i c = 10 ma; l b = 0 v (br)ceo min. 15 v i c = 10m a; i e = 0 v (br)cbo min. 40 v i c = 0; i e = 10m av (br)ebo min. 4,5 v i c = 10m a; v be = 0 v (br)ces min. 40 v switching times at t amb = 25 c storage time typ. 5,0 ns i con = i bon = ?i boff = 10 ma t s <13ns turn?on time t on typ. 8,0 ns i c = 10ma; i bon = 3ma; v cc = 3v t on <12ns turn?off time t off typ. 10 ns i c = 10ma; i bon = 3ma; i boff = 1,5ma; v cc = 3v t off <18ns CMBT2369
continental device india limited data sheet page 3 of 3 customer notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd are believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-2579 6150, 5141 1112 fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com
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